Semiconductor Phisics and Electronics

Scientific Staff

Current Fields of  Research & Development:

  • Thin film technologies:

p-InSb- n-CdTe heterostuctures

CH3NH3PbI3-x Clx  perovskite thin films

  • Compact modeling of modern CMOS devices,  multi-gate MOSFETs particularly NW gate-all-around FETs and FinFETs.

 

Recent publications

Avjyan K., Matevosyan L., Ohanyan K., Petrosyan L. “An a-C/n-Si heterostructure as an ionizing radiation detector”. Instruments and Experimental Techniques, 59(1) 60-62, (2016).

Yesayan A., Jazaeri F. and Sallese J. M., "Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges," in IEEE Transactions on Electron Devices, vol. 63, no. 3, pp. 1368-1374, March 2016.

Yesayan A., Petrosyan S. and Pregaldiny F., "Conductivity type switching in semiconductor nanowires," Proceedings EUROSOI-ULIS, Vienna, 2016, pp. 210-213, doi:10.1109/ULIS.2016.7440090.

Yesayan A., Petrosyan ., S., Jazaeri F., Sallese J-M., The effect of interface traps on electrical characteristics of nanowires and nanowire junctionless FETs,  Proceedings of «Microwave and THz Technologies, Photonics and Wireless Communications, IRPhE’ 2016» pp.73-76.

Arakelova E., Khachatryan A., Kteyan A., Avjyan K., Grigoryan S.- ZnOfilm deposition by DC magnetron sputtering: Effect of target configuration on the film properties - Thin Solid Films 612 (2016) 407–413

Matevosyan L., Kechiantz A., Avjyan K., Preparation technology and optical properties of CH3NH3PbI3-x Clx  perovskite thin films,   Proceedings of «Microwave and THz Technologies, Photonics and Wireless Communications, IRPhE’ 2016»,  pp.84-85.

Avjyan K.E., Margaryan R.Kh., Ohanyan K.S., Matevosyan L.A., Electrical Properties of Silicon Surface Barrier α- particle Detectors Fabricates by Dopant Diffusion and Vacuum Pulsed Laser Deposition Methods,  “Proc. of 10th International Conference on Semiconductor  Micro- & Nanoelectronics”,Yerevan, 2015, pp.55-57.

Margaryan A.V., Petrosyan S. G., Matevosyan L. A., Avjyan K.E., Electrical Properties of Pulsed Laser Deposition p-InSb-n-CdTe  Heterojnichion,  “Proc. of the 10th Intern. Conf. on Semiconductor Micro- and Nanoelectronics, Yerevan, 2015, pp. 97-100.

Kechiantz A., Afanasev A., Lazzari J.-L., Releasing confined holes from type-II quantum dots by enelastic scattering with hot photoelectrons, “Solar Energy Materials and Cells,” v. 144, 2015,  pp.767-774.