Publications
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Recent publications
Margaryan A., The dark current-voltage and capacitance -voltage characteristics of near-infrared sensitive (p)InSb/(n)CdTe heterostructure, Armenian Journal of Physics, vol. 9, issue 1,, pp. 1-5, 2016.
Margaryan,A. V.; Petrosyan, S. G.; Matevosyan, L. A.; Avjyan, K. E.Two-dimensional coordinate-sensitive photodetectors based on (p)InSb-(n)CdTe heterojunction”. Journal of Contemporary Physics (Armenian Academy of Sciences), 51(2), 202-209, (2016).
Petrosyan S., Khachatryan V., Yesayan A., Influence of surface recombination on the open circuit voltage of the nanowire solar cells with radial p-n junction, pp.77-80.
Petrosyan S., Nersesyan S., Khachatryan V., Critical radius of full depletion in semiconductor nanowires, Proceedings of «Microwave and THz Technologies, Photonics and Wireless Communications, IRPhE’ 2016» pp.73-76, pp.81-83.
Avjyan K., Matevosyan L., Ohanyan K., Petrosyan L. “An a-C/n-Si heterostructure as an ionizing radiation detector”. Instruments and Experimental Techniques, 59(1) 60-62, (2016).
Yesayan A., Jazaeri F. and Sallese J. M., "Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges," in IEEE Transactions on Electron Devices, vol. 63, no. 3, pp. 1368-1374, March 2016.
Yesayan A., Petrosyan S. and Pregaldiny F., "Conductivity type switching in semiconductor nanowires," Proceedings EUROSOI-ULIS, Vienna, 2016, pp. 210-213, doi:10.1109/ULIS.2016.7440090.
Yesayan A., Petrosyan ., S., Jazaeri F., Sallese J-M., The effect of interface traps on electrical characteristics of nanowires and nanowire junctionless FETs, Proceedings of «Microwave and THz Technologies, Photonics and Wireless Communications, IRPhE’ 2016» pp.73-76.
Arakelova E., Khachatryan A., Kteyan A., Avjyan K., Grigoryan S.- ZnOfilm deposition by DC magnetron sputtering: Effect of target configuration on the film properties - Thin Solid Films 612 (2016) 407–413
Matevosyan L., Kechiantz A., Avjyan K., Preparation technology and optical properties of CH3NH3PbI3-x Clx perovskite thin films, Proceedings of «Microwave and THz Technologies, Photonics and Wireless Communications, IRPhE’ 2016», pp.84-85.
Avjyan K.E., Margaryan R.Kh., Ohanyan K.S., Matevosyan L.A., Electrical Properties of Silicon Surface Barrier α- particle Detectors Fabricates by Dopant Diffusion and Vacuum Pulsed Laser Deposition Methods, “Proc. of 10th International Conference on Semiconductor Micro- & Nanoelectronics”,Yerevan, 2015, pp.55-57.
Margaryan A.V., Petrosyan S. G., Matevosyan L. A., Avjyan K.E., Electrical Properties of Pulsed Laser Deposition p-InSb-n-CdTe Heterojnichion, “Proc. of the 10th Intern. Conf. on Semiconductor Micro- and Nanoelectronics, Yerevan, 2015, pp. 97-100.
Kechiantz A., Afanasev A., Lazzari J.-L., Releasing confined holes from type-II quantum dots by enelastic scattering with hot photoelectrons, “Solar Energy Materials and Cells,” v. 144, 2015, pp.767-774.
Petrosyan S.G., Yesayan A.E., Nersesyan S.R., Khachatryan V.A., Capacitance of MOS structure based on inhomogeneously doped semiconductor Nanowire, “Proc. Of the 10th Intern. Conf. on Semiconductor Micro- and Nanoelectronics”, Yerevan, 2015, pp.10-13.
Margaryan A.V., Petrosyan S. G., Matevosyan L. A., Avjyan K.E., Electrical Properties of Pulsed Laser Deposition p-InSb-n-CdTe Heterojnichion, “Proc. of the 10th Intern. Conf. on Semiconductor Micro- and Nanoelectronics, Yerevan, 2015, pp. 97-100.
S. Petrosyan, A. Yesayan and S. Nersesyan, "Photocurrent relaxations and gain in semiconductor nanowires ", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400R (December 18, 2014); doi:10.1117/12.2180885.
С. Петросян, Л. Арутюнян, А. Мусаелян, В. Залесский, Исследование солнечных элементов CIGS, выращенных на стекло-керамических подложках, Труды международной конференции “Наука, техника и инновационные технологии в эпоху могущества и счастья”, Ашхабад, 2014, стр. 178-181.
Л. Матевосян, К. Авджян, С. Петросян, “ Исследование фотоприeмников на основе гетеропереходов (p)-InSb-(n)-CdTe”, Труды 23-ой Международной Научно-технической конференции и школы по Фотоэлектронике и проборам ночного видения, Москва, 28-30 мая, 2014, стр. 383-387.
M. Gonçalves, A. Melikyan, H. Minassian, T. Makaryan, and O. Marti, "Strong dipole-quadrupole coupling and Fano resonance in H-like metallic nanostructures," Opt. Express 22, 24516-24529 (2014).
T Makaryan, S Esconjauregui, M Gonçalves, J Yang, H Sugime, D Nille, P Renganathan, P Goldberg, J Robertson, “Hybrids of carbon nanotube forests and gold nanoparticles for improved surface plasmon manipulation”, ACS Applied Materials & Interfaces 6, 5344 (2014).
A Yesayan, F Pregaldiny, “A fully explicit static model for DG JLFET valid in all modes of operation,” MIXDES-2014 Proceedings, IEEE, pp. 45-48, 19-21 June 2014.
S. Petrosyan, V. Babayan, A. Musayelyan et al., “Thin-film solar cells on perlite glass-ceramic substrates,” Eur. Phys. J. Appl. Phys., v. 62, p. 30103-p1- 30103-p6, 2013.
V.Zalesski, V. Kravchenko, T. Leonova, A. Polikqanin, E. Zaretskaya, S. Petrosyan, A. Kechiandz, “CIGS solar cells with efficiency 10,1% on perlite glassceramic substrates,” Problems of Physics, Mathematics and Technics, v.1(14), pp.27-32, 2013.
S. Petrosyan, A. Yesayan, S. Nersesyan, “The peculiarities of nanowire radial p-n-junction,” Semiconductor Microelectronics, Proceedings of the 9th International Conference, Yerevan, May 24-26, Armeia, pp. 109-112, 2013.
S. Nersesyan and S. Petrosyan, “Depletion length and space charge layer capacitance in doped semiconductor nanosphere,” Semiconductor Science and Technology, v.27(12), pp. 125009 (1-4), 2012.
A. Vardanyan and A. Kteyan, Int. J. Mod. Phys. B v.27, p.1250206-1250220, 2012.
S. Petrosyan, A. Yesayan, S. Nersesyan, “Transient and Stationary Photoconductivity of semiconductivity of Semiconductor Nanowires,” AJP, v. 6, no. 2, pp. 72-81, 2013.
V. H. Babayan, M. T. Ayvazyan, A. A. Kteyan and R. A. Vardanyan, “Dynamic Deformation of Vortex Lattice in the Hollow Superconducting YBaCuO Cylinder,” International Journal of Modern Physics B, v. 23, no. 27 pp. 5261-5273, 2009.
R. A. Vardanyan, A. A. Kteyan, “Bound electronic states on a dislocation kink in semiconductors,” Phys. status solidi. C, v 4, No: 8 p. 2903-2907, 2007.